voidless-hermetically-sealed unidirectional transient suppressors microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2007 5-15-2007 rev b www. microsemi . com scottsdale division 1n6469 thru 1n6476 1n6461 ? 1n6468 1n6469 ? 1n6476 description appearance this series of industry recognized voidless-hermetically-sealed unidirectional transient voltage suppressor (tvs) designs is military qualified to mil-prf- 19500/552 and are ideal for high-reliability ap plications where a failure cannot be tolerated. they provide a working peak ?s tandoff? voltage selection from 5.0 to 51.6 volts with 1500 w ratings. they are very robust in hard-glass construction and also use an internal metallurgical bond identified as category i for high reliability applications. the 1500 w series is militar y qualified to mil-prf-19500/552. these devices are also available in a surface mount melf package configuration by adding a ?us? suffix (see separate data sheet for 1n6469us thru 1n6476aus). microsemi also offers numerous other tvs products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? high surge current and peak pulse power provides transient voltage protection for sensitive circuits ? triple-layer passivation ? internal ? category i? metallurgical bonds ? voidless hermetically sealed glass package ? jan/tx/txv military qualif ications available per mil- prf-19500/552 by adding jan, jantx, or jantxv prefix ? further options for screening in accordance with mil- prf-19500 for jans by using a ?msp? prefix, e.g. msp6469, msp6476, etc. ? surface mount equivalents are also available in a square-end-cap melf configuration with a ?us? suffix (see separate data sheet) ? military and other high re liability transient protection ? extremely robust construction ? working peak ?standoff? voltage (v wm ) from 5.0 to 51.6 v ? available as 1500 w peak pulse power (p pp ) ? esd and eft protection per iec61000-4-2 and iec61000-4-4 respectively ? secondary lightning protection per select levels in iec61000-4-5 ? flexible axial-leaded mounting terminals ? nonsensitive to esd per mil-std-750 method 1020 ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? operating & storag e temperature: -55 o c to +175 o c ? peak pulse power at 25 o c: 1500 watts @ 10/1000 s (also see figures 1,2 and 4) ? impulse repetition rate (duty factor): 0.01% ? forward surge current: 130 amps@ 8.33 ms one-half sine wave ? forward voltage: 1.5 v @ 4 amps dc and 4.8 v at 100 amps (pulsed) ? steady-state power: 3.0 w @ t a = 25 o c (see note below and figure 4) ? thermal resistance @ 3/8 inch lead length: 50.0 o c/w ? solder temperatures: 260 o c for 10 s (maximum) ? case: hermetically se aled voidless hard glass with tungsten slugs ? terminations: axial-leads are tin/lead (sn/pb) over copper ? marking: body painted and part number, etc. ? polarity: cathode band ? tape & reel option: standard per eia-296 ? weight: 1270 mg ? see package dimensions on last page note: steady-state power ratings with reference to am bient are for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t j(max) is not exceeded. ?g? package
voidless-hermetically-sealed unidirectional transient suppressors microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 2 copyright ? 2007 5-15-2007 rev b www. microsemi . com scottsdale division 1n6469 thru 1n6476 1n6461 ? 1n6468 1n6469 ? 1n6476 electrical characteristics type break down voltage v(br) min. breakdown current i (br) working peak voltage v wm max leakage current i d maximum clamping voltage v c @ 10/1000 s maximum peak pulse current i pp @8/20 s @10/1000 s maximum temp. coef. of v (br) volts madc vdc adc v(pk) a(pk) a(pk) %/ o c 1n6469 5.6 50 5 1500 9.0 945 167 -.03, +0.04 1n6470 6.5 50 6 1000 11.0 775 137 0.06 1n6471 13.6 10 12 20 22.6 374 66 0.085 1n6472 16.4 10 15 10 26.5 322 57 0.085 1n6473 27.0 5 24 5 41.4 207 36.5 .096 1n6474 33.0 1 30.5 5 47.5 181 32 .098 1n6475 43.7 1 40.3 5 63.5 135 24 .101 1n6476 54.0 1 51.6 5 78.5 107 19 .103 symbols & definitions symbol definition v br minimum breakdown voltage: the minimum volt age the device will exhibit at a specified current. v wm working peak voltage: the maximum peak voltage that can be applied over the operat ing temperature range. this is also referred to as standoff voltage. i d maximum standoff current: the maximum current that wi ll flow at the specified voltage and temperature. v c maximum clamping voltage at specified i pp (peak pulse current) at the specified pulse conditions. p pp peak pulse power: the peak power dissipation resulting from the peak impulse current i pp . graphs fig. 1 ? non-repetive peak pulse power rating curve fig. 2 pulse wave form for exponential surge note: peak power defined as peak vo ltage times peak current for 10/1000 s pulse time duration (tp) is defined as that point where i p decays to 50% of peak value (i pp ). peak value i pp pulse current (i p ) in percent of i pp time (t) in milliseconds
voidless-hermetically-sealed unidirectional transient suppressors microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 3 copyright ? 2007 5-15-2007 rev b www. microsemi . com scottsdale division 1n6469 thru 1n6476 1n6461 ? 1n6468 1n6469 ? 1n6476 figure 3 t ? temperature ? o c 8/20 s current impulse waveform figure 4 derating curve package dimensions inches [mm] package g note: package g lead dimension diameter is 0. 040 inch nominal with ?.003 +.002 inch tolerance peak pulse power (ppp), current (ipp), and dc power in percent of 25 o c ratin g
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